دیتاشیت CSD86330Q3D
مشخصات دیتاشیت
| نام دیتاشیت |
CSD86330Q3D
|
| حجم فایل |
1499.918
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
23
|
مشخصات
-
RoHS:
true
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Type:
2 N-Channel(Half Bridge)
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD86330Q3D
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Power Dissipation (Pd):
6W
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Drain Source Voltage (Vdss):
25V
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Continuous Drain Current (Id):
20A
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Gate Threshold Voltage (Vgs(th)@Id):
2.1V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
9.6mΩ@8V,14A
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Package:
LSON-8(3.3x3.3)
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Manufacturer:
Texas Instruments
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Vgs(th) (Max) @ Id:
2.1V @ 250µA
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Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 12.5V
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Package / Case:
8-PowerLDFN
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Series:
NexFET™
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Drain to Source Voltage (Vdss):
25V
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
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Current - Continuous Drain (Id) @ 25°C:
20A
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Packaging:
Cut Tape (CT)
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Supplier Device Package:
8-LSON (3.3x3.3)
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Part Status:
Active
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Base Part Number:
CSD86330
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FET Feature:
Logic Level Gate
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Mounting Type:
Surface Mount
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FET Type:
2 N-Channel (Half Bridge)
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Power - Max:
6W
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Rds On (Max) @ Id, Vgs:
9.6mOhm @ 14A, 8V
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detail:
Mosfet Array 2 N-Channel (Half Bridge) 25V 20A 6W Surface Mount 8-LSON (3.3x3.3)
